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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
Verwandte Teile
onsemiNTMD6601NR2G
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 15nC @ 10V 1.1A 600mW 80V
Beschreibungen
Beschreibungen von onsemi FDS3601, die von den Distributoren bereitgestellt werden.
MOSFET 2N-CH 100V 1.3A 8SOIC
100V/20V, 480/530MO, NCH, DUAL, SO8, 600A GOX, PTI
Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)1.3 A
Current Rating1.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance530 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance153 pF
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2 W
Rds On Max480 mΩ
Rise Time4 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)100 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm