Infineon IRF7380PBF

Single N-Channel 80 V 73 mOhm 15 nC HEXFET® Power Mosfet - SOIC-8

Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC Tube

Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):73mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Benefits: RoHS Compliant; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design; Dual N-Channel MOSFET

DUAL N CHANNEL MOSFET, 80V, SOIC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):73mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.6A; Fall Time tf:17ns; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1S1,2G1,3S2,4G2,(5&6)D2,(8&7)D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:29A; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V