onsemi FDPF8N50NZ
$ 1.323
EOL
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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-18
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
Verwandte Teile
VishaySIHF8N50D-E3
MOSFET, N-CH, 500V, 8.7A, TO-220FP; Transistor Polarity:N Channel; Continuous Dr
STMicroelectronicsSTP9NK50ZFP
STP9NK50ZFP N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN TO-220FP
Beschreibungen
Beschreibungen von onsemi FDPF8N50NZ, die von den Distributoren bereitgestellt werden.
N-Channel Power MOSFET, UniFETTM II, 500 V, 8 A, 850 mΩ, TO-220F
Single N-Channel 500 V 130 W 18 nC DMOS Through Hole Mosfet - TO-220F-3
Unifet2 500V N-Channel Mosfet, To220F Single Gauge Rohs Compliant: Yes
UniFET2 500V N-channel MOSFET, TO220F Single gage
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, UNITFET, 500V, 8A, TO-220F;; N CH MOSFET, UNITFET, 500V, 8A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):770mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance735 pF
Max Operating Temperature150 °C
Max Power Dissipation40.3 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40.3 W
Rds On Max850 mΩ
Rise Time34 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time17 ns
Dimensions
Height15.87 mm
Length10.16 mm
Width4.7 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen