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Nicht autorisierte Händler
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3-Monats-Trend: Restocked
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-09-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-08-27
LTD Date2013-02-27
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Beschreibungen
Beschreibungen von onsemi FDMS8848NZ, die von den Distributoren bereitgestellt werden.
MOSFET N-CH 40V 22.8A/49A 8PQFN
Power Field-Effect Transistor, 22.8A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
PT4 Nch WITH ZENER
The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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3-Monats-Trend: Restocked
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Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)22.8 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.1 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.075 nF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max3.1 mΩ
Rise Time19 ns
Turn-Off Delay Time63 ns