onsemi FDMS3572

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ
$ 1.63
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IHS

Datasheet7 SeitenVor 2 Jahren
Datasheet7 SeitenVor 19 Jahren

onsemi

element14 APAC

Farnell

Fairchild Semiconductor

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Lieferkette

Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi FDMS3572, die von den Distributoren bereitgestellt werden.

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ
onsemi
Trans MOSFET N-CH Si 80V 8.8A 8-Pin WDFN EP T/R / MOSFET N-CH 80V 8.8A POWER56
Win Source
Power MOSFET, N Channel, 80 V, 8.8 A, 0.0165 ohm, Power 56, Surface Mount
Avnet
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:80V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:8.8A; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDMS3572; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
element14 APAC
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Fairchild Semiconductor

Bilder

Farnell
Farnell
Augswan
iiiC

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