onsemi FDD86326

Name: onsemi FDD86326
Brand: onsemi
SKU: FDD86326

Shielded Gate PowerTrench® MOSFET, N-Channel, 80 V, 37 A, 23 mΩ

$ 1.203

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Distributor		SKU		Min	Pkg
Verical	2	FDD86326	7.000	242					1,288	1,147
Rochester Electronics	2	FDD86326	7.000					1,240	1,030	0,918	23h
DigiKey	3	FDD86326CT-ND	6.644	1	Cut Tape	3,200	2,077	1,435	1,118	1,118
Newark		FDD86326	0	2500	Tape & Reel					1,100
Onlinecomponents.com		FDD86326	0	625	Bulk				1,900	0,907

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3-Monats-Trend: -1.80%

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Technical Drawing1 SeiteVor 3 Jahren

IHS

Master Electronics

onsemi

Fairchild Semiconductor

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3-Monats-Trend:

-1.80%

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-06-10

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi FDD86326, die von den Distributoren bereitgestellt werden.

Shielded Gate PowerTrench® MOSFET, N-Channel, 80 V, 37 A, 23 mΩ

onsemi

Power Field-Effect Transistor, 8A I(D), 80V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Fairchild Semiconductor

MOSFET, N CH, 80V, 37A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:62W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Bestandsverlauf

3-Monats-Trend: -1.80%

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Technische Spezifikationen

Physical

Case/PackageTO-252

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight260.37 mg

Technical

Continuous Drain Current (ID)8 A

Drain to Source Breakdown Voltage80 V

Drain to Source Resistance23 mΩ

Drain to Source Voltage (Vdss)80 V

Element ConfigurationSingle

Fall Time2.9 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.035 nF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation62 W

Min Breakdown Voltage80 V

Min Operating Temperature-55 °C

Nominal Vgs3.1 V

Number of Channels1

Number of Elements1

Power Dissipation3.1 W

Rds On Max23 mΩ

Rise Time3 ns

Threshold Voltage3.1 V

Turn-Off Delay Time13.4 ns

Turn-On Delay Time7.6 ns

Dimensions

Height2.517 mm

Length6.73 mm

Width6.22 mm