Beschreibungen von onsemi FCP20N60, die von den Distributoren bereitgestellt werden.
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220
MOSFET N-CH 600V 20A TO-220 / Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
Single N-Channel 600 V 208 W 98 nC Silicon Through Hole Mosfet - TO-220-3
Power MOSFET, N Channel, 600 V, 20 A, 0.15 ohm, TO-220, Through Hole
Res Thin Film 0603 4.7K Ohm 0.1% 0.1W(1/10W) ±15ppm/C Molded SMD Automotive Punched T/R
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.19ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.