onsemi FCD2250N80Z

N-channel Power Mosfet, Superfet® II, 800 V, 2.6 A, 2.25 Ω, Dpak
$ 1.177
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SKU
Min.
Verpackung
Staffelpreise
Arrow Electronics
FCD2250N80Z
3
1
USD
1,173
1,173
1,173
1,173
1,173
Flip Electronics
FCD2250N80Z
552
3h
Newark
3
FCD2250N80Z
0
1
Cut Tape
USD
3,050
3,050
1,490
1,180
1,080
Mouser
512-FCD2250N80Z
4.497
1
Tape & Reel
USD
2,850
1,830
1,240
0,936
0,841
Onlinecomponents.com
FCD2250N80Z
0
625
Bulk
USD
1,529
0,730

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Technical Drawing1 SeiteVor 4 Jahren

Master Electronics

IHS

onsemi

Fairchild Semiconductor

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-12-19
Lifecycle StatusProduction (Last Updated: 23 hours ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 23 hours ago)

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Beschreibungen

Beschreibungen von onsemi FCD2250N80Z, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, DPAK
onsemi
Trans MOSFET N-CH 800V 2.6A 3-Pin(2+Tab) DPAK T/R
Richardson RFPD
TAPE REEL / SuperFET2 800V 2250mOhm Zener
Newark
场效应管, MOSFET, N沟道, 800V, 2.6A, 150度 C, 39W;
element14 APAC
MOSFET, N-CH, 800V, 2.6A, 150DEG C, 39W;
Farnell
Power Field-Effect Transistor, 2.6A I(D), 800V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Abacus Technologies
39W(Tc) 20V 4.5V@260µA 14nC@10V N-Ch 800V 2.25Ω@1.3A,10V 2.6A 585pF@100V TO-252AA SMD 6.73mm × 6.22mm × 2.39mm
UnikeyIC
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Fairchild Semiconductor

Bilder

element14 APAC
TME

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  • ON SEMICONDUCT
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