QUELLE	eCAD	mCAD	DATEIEN
Component Search Engine	SymbolFußabdruck	3D	Herunterladen
EE Concierge	SymbolFußabdruck
SnapEDA	SymbolFußabdruck	3D	Herunterladen
Ultra Librarian	SymbolFußabdruck		Herunterladen

Beim Herunterladen der CAD-Modelle wird die Partner-Website in einem neuen Tab geöffnet.

Durch das Herunterladen von CAD-Modellen von Octopart stimmen Sie unseren Allgemeinen Geschäftsbedingungen und unserer Datenschutzrichtlinie zu.

Alternative Teile

Dieser Teil

Alternative Teile

onsemiBC847BPDW1T1G

onsemiBC847BPDW1T2G

Price @ 1000

$ 0.051

Stock

15,889,527

1,115,195

Authorized Distributors

Mount

Case/Package

SOT-363

SOT-363-6

Polarity

NPN, PNP

Collector Emitter Breakdown Voltage

45 V

Max Collector Current

100 mA

Transition Frequency

100 MHz

Collector Emitter Saturation Voltage

650 mV

hFE Min

200

Power Dissipation

380 mW

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-03-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi BC847BPDW1T1G, die von den Distributoren bereitgestellt werden.

Bipolar - RF Transistor, NPN, PNP, 45 V, 100 MHz, 380 mW, 100 mA, SOT-363

Avnet Silica

ON SEMI BC847BPDW1T1G DUAL NPN+PNP BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SC-88

RS (Formerly Allied Electronics)

100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor

onsemi

BC847BPDW1 Series 45 V 100 mA SMT NPN/PNP Dual Transistor - SOT-363

Future Electronics

DUAL GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon

ComSIT Distribution GmbH

Trans GP BJT NPN/PNP 45V 0.1A 380mW 6-Pin SC-88 T/R

Verical

45V 380mW 200@2mA,5V 100mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS

Dasenic

Bipolar Transistors - BJT 100mA 50V Dual Complementary

Digi-ic_SMART PIONEER

TRANSISTOR/PNP/NPN SS 45V 100MA SC70-6 H

Component Sense

onsemi NPN/PNPTransistor, SOT-363encapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage45 V

UnikeyIC

TRANSISTOR,NPNPNP,SOT363, FULL REEL; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 150hF

Farnell

These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.

North Star Micro

Transistor, Npn/Pnp, 100Mhz, Sot-363-6; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage Max:45V; Transition Frequency:100Mhz; Power Dissipation:380Mw; Continuous Collector Current:100Ma; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC847BPDW1T1G.

Newark

Bilder

Augswan

Newark

Farnell

Rochester Electronics

LZChips

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

BC847BPDW1T1G.

Bestandsverlauf

3-Monats-Trend: +65.17%

CAD-Modelle

Symbol, Footprint und 3D STEP herunterladen

Alternative Teile

1 Teil verfügbar

Technische Spezifikationen

Physical

Case/PackageSOT-363

Contact PlatingTin

Number of Pins6

Number of Terminals6

Technical

Collector Base Voltage (VCBO)50 V

Collector Emitter Breakdown Voltage45 V

Collector Emitter Saturation Voltage650 mV

Collector Emitter Voltage (VCEO)45 V

Current Rating1 A

Element ConfigurationDual

Emitter Base Voltage (VEBO)5 V

Frequency100 MHz

Gain Bandwidth Product100 MHz

hFE Min200

Max Breakdown Voltage45 V

Max Collector Current100 mA

Max Frequency100 MHz

Max Operating Temperature150 °C

Max Power Dissipation380 mW

Min Operating Temperature-55 °C

Number of Elements2

Output Voltage5 V

PackagingTape and Reel

PolarityNPN, PNP

Power Dissipation380 mW

Schedule B8541210080

TerminationSMD/SMT

Transition Frequency100 MHz

Voltage Rating (DC)45 V

Dimensions

Height900 µm

Length2 mm

Width1.25 mm