onsemi 2N7000-D26Z

2N7000 Series 60 V 200 mA N-Ch. Enhancement Mode Field Effect Transistor-TO-92-3
$ 0.161
Production
HerstellerseiteDatenblatt

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DistributorSKUMinPkg
Avnet
3
2N7000-D26Z4.0002K
1d
Newark
3
2N7000-D26Z1.8311Cut Tape
Verical
3
2N7000_D26Z4.0002K
Arrow Electronics
2
2N7000-D26Z4.9551
Future Electronics
3
2N7000-D26Z42.0002KTape & Reel

Datenblätter und Dokumente

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IHS

Datasheet12 SeitenVor 2 Jahren
Datasheet0 SeitenVor 0 Jahren

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Master Electronics

Future Electronics

Fairchild Semiconductor

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Alternative Teile

Dieser Teil
Alternative Teile
onsemi2N7000-D26Z
onsemi2N7000
onsemi2N7000
Price @ 1000
$ 0.161
$ 0.124
$ 0.124
Stock
1,061,754
2,135,402
2,135,402
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92
TO-92
TO-92
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
200 mA
200 mA
200 mA
Threshold Voltage
2.1 V
2.1 V
2.1 V
Rds On Max
2 Ω
5 Ω
5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
400 mW
350 mW
350 mW
Input Capacitance
50 pF
40 pF
40 pF

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi 2N7000-D26Z, die von den Distributoren bereitgestellt werden.

2N7000 Series 60 V 200 mA N-Ch. Enhancement Mode Field Effect Transistor-TO-92-3
Future Electronics
N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω
onsemi
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
EBV Elektronik
ON SEMICONDUCTOR - 2N7000-D26Z - MOSFET, N CH, 60V, 0.2A, TO-92
Fly-Wing Technology
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
IHS
MOSFET, N CH, 60V, 0.2A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:400mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:200mA; Package / Case:TO-92; Power Dissipation Pd:400mW; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
element14 APAC
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Fairchild Semiconductor

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Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • 2N7000 D26Z
  • 2N7000-D26Z.
  • 2N7000D26Z
  • 2N7000_D26Z
  • 2N7000_D26Z.