NXP Semiconductors MRFE6VP5600HR5

RF Power Transistor, 1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
$ 212.395
EOL
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DistributorSKUMinPkg
DigiKey
3
MRFE6VP5600HR5CT-ND1001Cut Tape
Newark
2
MRFE6VP5600HR5050Cut Tape
RFMWMRFE6VP5600HR501
17h
AvnetMRFE6VP5600HR5050
17h
Future Electronics
2
MRFE6VP5600HR5050Tape & Reel

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IHS

Datasheet13 SeitenVor 15 Jahren

Future Electronics

Freescale Semiconductor

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Lieferkette

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2010-12-14
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-09-30
LTD Date2027-09-30

Verwandte Teile

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RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
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NXP SemiconductorsMRFE6VP6300HSR3
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
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VishayIRLL110TRPBF
IRLL110TRPBF N-CHANNEL MOSFET TRANSISTOR, 1.5 A, 100 V, 3 + TAB-PIN SOT-223
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VishayIRLR110PBF
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
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VishayIRLR110TRPBF
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
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Beschreibungen

Beschreibungen von NXP Semiconductors MRFE6VP5600HR5, die von den Distributoren bereitgestellt werden.

RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
RFMW
Tape & Reel (TR) N-CHANNEL COMMON SOURCE 2ELEMENTS EAR99 RF Mosfet 100mA 600W 25dB 230MHz
Fly-Wing Technology
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHS
NXP Semiconductors SCT
MRFE6VPx Series 130 V 230 MHz RF Power Field Effect Transistor - NI-1230
Future Electronics
FET RF 2CH 130V 230MHZ NI1230 / Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
Win Source
Transistor RF FET N-CH 130V 1.8MHz to 600MHz 4-Pin NI-1230 T/R
Avnet Japan
FET RF 2N-CH 230MHZ 50V NI1230
DigiKey
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
IHS
TRANSISTOR, RF, 130V, NI-1230-4; Drain Source Voltage Vds: 130VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; O; Available until stocks are exhausted Alternative available
Farnell

Bilder

NXP Semiconductors
Farnell
Newark
RFMW
LZChips

Aliasnamen des Herstellers

NXP Semiconductors verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. NXP Semiconductors ist möglicherweise auch unter den folgenden Namen bekannt:

  • NXP
  • PHILIPS
  • PHIL
  • NXP USA Inc
  • PHI
  • PHILLIPS
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • NXP/PHILIPS
  • PHILIPS SEMICONDUCTOR
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • NXP / Freescale
  • PHILL
  • PHILIPS ECG
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP