Nexperia PDTC124ET,215
$ 0.052
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | PDTC124ET,215 | 379 | 1 | Cut Tape | ||||||||
| TME | PDTC124ET.215 | 0 | 1 | 17h | ||||||||
| Avnet | PDTC124ET,215 | 0 | 3K | 20h | ||||||||
| Farnell | PDTC124ET,215 | 0 | 5 | Cut Tape | 4h | |||||||
| element14 APAC | PDTC124ET,215 | 0 | 5 | Cut Tape | 6h |
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3-Monats-Trend: +1319%
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Price @ 1000
$ 0.052
$ 0.031
Stock
1,128,295
3,727,565
Authorized Distributors
5
1
Mount
Surface Mount
Surface Mount
Case/Package
TO-236-3
TO-236-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
300 mV
300 mV
hFE Min
60
60
Power Dissipation
250 mW
-
Lieferkette
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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Beschreibungen
Beschreibungen von Nexperia PDTC124ET,215, die von den Distributoren bereitgestellt werden.
PDTC124ET Series 50 V 100 mA SMT NPN Resistor-Equipped Transistor - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ
Trans Digital BJT NPN 50V 100mA 250mW 3-Pin SOT-23 T/R
TRANS PREBIAS NPN 250MW TO236AB / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 mW Surface Mount TO-236AB
BRT TRANSISTOR, NPN, 50V, 100MA, 22KOHM / 22KOHM, 3-SOT-23; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1 ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, SOT-23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: PDTC124E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 0mA; DC Collector Current: 100mA; DC Current Gain hFE: 60hFE; Full Power Rating Temperature: 25°C; Hfe Min: 56; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 250mW; Power Dissipation Ptot Max: 250mW; Resistance R1: 22kohm; Resistance R2: 22kohm; Transistor Case Style: SOT-23; Transistor Polarity: NPN; Transistor Type: Bias Resistor (BRT); Voltage Vcbo: 50V
Aliasnamen des Herstellers
Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Bestandsverlauf
3-Monats-Trend: +1319%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min60
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage50 V
PolarityNPN
Power Dissipation250 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage50 V
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm
Datenblätter und Dokumente
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Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen