Nexperia BCV61B,215

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
$ 0.235
Production
HerstellerseiteDatenblatt

Preis und Lagerbestand

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DistributorSKUMinPkg
NewarkBCV61B,2153801Cut Tape
TME
2
BCV61B.21501
12h
Future ElectronicsBCV61B,21503KTape & Reel
AvnetBCV61B,215012K
2d
element14 APAC
2
BCV61B,21505Cut Tape
12h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Nexperia BCV61B,215 herunter.

IHS

Datasheet13 SeitenVor 16 Jahren

element14 APAC

Farnell

Nexperia

TME

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Alternative Teile

Dieser Teil
Alternative Teile
NexperiaBCV61B,215
InfineonBCV61BE6327HTSA1
Price @ 1000
$ 0.235
$ 0.498
Stock
531,761
348,416
Authorized Distributors
6
4
Mount
Surface Mount
Surface Mount
Case/Package
TO-253-4
SOT-143
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
100 MHz
250 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
hFE Min
110
200
Power Dissipation
250 mW
300 mW

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

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Beschreibungen

Beschreibungen von Nexperia BCV61B,215, die von den Distributoren bereitgestellt werden.

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
IHS
BCV61 Series 30 V 100 mA 250 mW NPN General Purpose Transistor - SOT-143
Future Electronics
30V 250mW 200@2mA,5V 100mA 2 NPN SOT-143 Bipolar Transistors - BJT ROHS
Dasenic
Trans GP BJT NPN 30V 0.1A 4-Pin(3+Tab) SOT-143B T/R
Avnet
500mV 2 NPN (Dual) Current Mirror 250mW 6V 15nA 30V 30V 100mA SOT-143B 3mm*1.4mm*1mm
UnikeyIC
TRANSISTOR, ARRAY, NPN, 30V, 100mA, SOT-
element14 APAC
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
TRANSISTOR, ARRAY, NPN, 30V, 100mA, SOT-143B-4; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:100; Operating Temperature Min:-65°C ;RoHS Compliant: Yes
Newark

Bilder

Nexperia
Newark
TME
Future Electronics
Burklin Elektronik
Component Sense
Component Sense
Rochester Electronics

Aliasnamen des Herstellers

Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • BCV61B,215.