Nexperia BCP52,135

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
$ 0.217
Production
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Preis und Lagerbestand

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DistributorSKUMinPkg
Rochester ElectronicsBCP52,1351.400
14h
NewarkBCP52,13505Cut Tape
AvnetBCP52,135016K
3d
Farnell
2
BCP52,13505Cut Tape
2h
element14 APAC
2
BCP52,13505Cut Tape
4h

Datenblätter und Dokumente

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Nexperia

Datasheet12 SeitenVor 1 Jahre

IHS

Future Electronics

_legacy Avnet

iiiC

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Alternative Teile

Dieser Teil
Alternative Teile
NexperiaBCP52,135
Diodes Inc.BCP52TA
Diodes Inc.BCP52TA
Price @ 1000
$ 0.217
$ 0.119
$ 0.119
Stock
831,253
713,621
713,621
Authorized Distributors
5
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SC
SOT-223
SOT-223
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
60 V
60 V
60 V
Max Collector Current
1 A
1 A
1 A
Transition Frequency
115 MHz
125 MHz
125 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
500 mV
hFE Min
25
25
25
Power Dissipation
1.5 W
2 W
2 W

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1993-03-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

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Beschreibungen

Beschreibungen von Nexperia BCP52,135, die von den Distributoren bereitgestellt werden.

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
IHS
BCP52 Series 60 V 1 A PNP Surface Mount Medium Power Transistor - SOT-223
Future Electronics
Bipolar Transistors (BJT); BCP52,135; NEXPERIA; PNP; 60 V; 1 A; 4
Maritex
General Purpose Transistors PNP Ic=1A Vceo=60V hfe=63~250 P=1.35W SOT223
HQonline
Trans GP BJT PNP 60V 1A 4-Pin(3+Tab) SOT-223 T/R
Avnet Japan
60V 650mW 1A 63@150mA2V 145MHz 500mV@500mA50mA PNP +150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Dasenic
500mV@ 50mA,500mA PNP 1.35W 5V 100nA 60V 60V 1A SOT-223 1.7mm
UnikeyIC
Transistor, Aec-Q101, Pnp, -60V, Sot-223; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-60V; Transition Frequency Ft:145Mhz; Power Dissipation Pd:650Mw; Dc Collector Current:-1A; Dc Current Gain Hfe:63Hfe; Transistor Rohs Compliant: Yes |Nexperia BCP52,135
Newark

Bilder

Nexperia
Augswan
RS
iiiC
Future Electronics

Aliasnamen des Herstellers

Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • BCP52 135
  • BCP52135