Nexperia BC856W,115
$ 0.034
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BC856W,115 | 768 | 1 | Cut Tape | ||||||||
| Rochester Electronics | BC856W,115 | 326.920 | 3h | |||||||||
| Future Electronics | BC856W,115 | 36.000 | 3K | Tape & Reel | ||||||||
| Verical | BC856W,115 | 78.000 | 14019 | |||||||||
| Arrow Electronics | BC856W,115 | 4.900 | 1 |
Bestandsverlauf
3-Monats-Trend: +4.92%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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CAD-Modelle
Laden Sie Nexperia BC856W,115 Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.
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|---|---|---|---|
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Price @ 1000
$ 0.034
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$ 0.05
Stock
2,472,866
573,506
573,506
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-323
SOT-323
SOT-323
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
65 V
65 V
65 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
200 MHz
200 MHz
Collector Emitter Saturation Voltage
650 mV
650 mV
650 mV
hFE Min
125
125
125
Power Dissipation
200 mW
200 mW
200 mW
Lieferkette
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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onsemiFJX3001RTF
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onsemiFJX3003RTF
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ROHMDTA115EUAT106
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Beschreibungen
Beschreibungen von Nexperia BC856W,115, die von den Distributoren bereitgestellt werden.
Bipolar Junction Transistors - BJT; NEXPERIA; BC856W, 115; PNP; 3; -65 V; -200 mA
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
65V 200mW 125@2mA,5V 100mA PNP SOT-323-3 Bipolar (BJT) ROHS
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
TRANSISTOR, PNP, -65V, -100MA, SOT-323-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 125hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C
Aliasnamen des Herstellers
Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Bestandsverlauf
3-Monats-Trend: +4.92%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-323
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)65 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min125
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingDigi-Reel®
PolarityPNP
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency100 MHz
Dimensions
Height1.1 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen