Nexperia BC847BPN,115

Bipolar Transistors (BJT); BC847BPN, 115; NEXPERIA; NPN, PNP; 6; 45 V; 100 mA
$ 0.043
Production
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
AvnetBC847BPN,115147.0003K
1d
Newark
3
BC847BPN,115875Cut Tape
Verical
2
BC847BPN,11511.31775
Arrow Electronics
2
BC847BPN,11511.3171
Future Electronics
2
BC847BPN,1151.536.0003KTape & Reel

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Nexperia BC847BPN,115 herunter.

IHS

Datasheet13 SeitenVor 3 Jahren
Datasheet14 SeitenVor 17 Jahren

Newark

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Nexperia

TME

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Alternative Teile

Dieser Teil
Alternative Teile
NexperiaBC847BPN,115
NexperiaBC847BVN,115
NexperiaBC847BVN,115
Price @ 1000
$ 0.043
$ 0.11
$ 0.11
Stock
19,253,119
1,500,542
1,500,542
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-363
SOT-666
SOT-666
Polarity
NPN, PNP
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
100 V
300 mV
300 mV
hFE Min
200
200
200
Power Dissipation
400 mW
300 mW
300 mW

Lieferkette

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

Verwandte Teile

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Transistor: NPN; bipolar; 45V; 0.1A; 210mW; -55+150 deg.C; SMD; SOT363
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onsemiSBC847CDW1T1G
ON SEMI SBC847CDW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SOT-363
Details
Diodes Inc.DDC123JU-7-F
Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm
Details
Diodes Inc.DDC114YU-7-F
DDC114YU Series NPN/PNP 50 V 100 mA Dual Transistor Surface Mount - SOT-363-6
Details
ROHMUMB10NTN
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Details
ToshibaRN1905,LF(CT
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Details

Beschreibungen

Beschreibungen von Nexperia BC847BPN,115, die von den Distributoren bereitgestellt werden.

Bipolar Transistors (BJT); BC847BPN,115; NEXPERIA; NPN, PNP; 6; 45 V; 100 mA
Maritex
Trans GP BJT NPN/PNP 45V 0.1A Automotive 6-Pin TSSOP
Component Sense
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon
IHS
45 V, 100 mA NPN/PNP general-purpose transistor
Nexperia
Nexperia BC847BPN115 Transistor NPN-PNP dual 45V 100mA tape full reel
Rapid Electronics
100 mA 45 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Component Stockers USA
General Purpose Transistors 45V 100mA NPN+PNP SOT363 200~450
HQonline
NPN/PNP transistor,BC847BPN UMT6 100mA
RS APAC
TRANS NPN/PNP 45V 100MA 6TSSOP
DigiKey
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:220mW; DC Collector Current:100mA ;RoHS Compliant: Yes
Newark
TRANSISTOR, NPN/PNP, DUAL , 45V, SC-88; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:220mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
Farnell
Transistor Polarity = PNP / Transistor Polarity = NPN / Configuration = Dual Common Anode / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 220 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 755
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Aliasnamen des Herstellers

Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • "BC847BPN,115"
  • BC847BPN 115
  • BC847BPN,115.
  • BC847BPN-115
  • BC847BPN/115
  • BC847BPN115