Nexperia BC847B,215
$ 0.023
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BC847B,215 | 29.067 | 5 | Cut Tape | ||||||||
| Verical | BC847B@215 | 11.212 | 173 | |||||||||
| Arrow Electronics | BC847B,215 | 11.212 | 1 | |||||||||
| Rochester Electronics | BC847B,215 | 3.712.000 | 4h | |||||||||
| Future Electronics | BC847B,215 | 723.000 | 3K | Tape & Reel |
Bestandsverlauf
3-Monats-Trend: -93.55%
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Price @ 1000
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Stock
11,751,319
70,320,561
70,320,561
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
400 mV
600 mV
600 mV
hFE Min
200
200
200
Power Dissipation
250 mW
225 mW
225 mW
Lieferkette
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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Beschreibungen
Beschreibungen von Nexperia BC847B,215, die von den Distributoren bereitgestellt werden.
45V 250mW 100mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Bipolar Junction Transistor, NPN Type, TO-236AA
General Purpose Transistors VCEO=45V IC=100mA NPN SOT23 200~450
100 mA 45 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain Max (hfe):290 ;RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100mA; Current Ic hFE:2A; Device Marking:BC847B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:200mW; Reel Quantity:3000; SMD Marking:1F; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:50V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
Aliasnamen des Herstellers
Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Bestandsverlauf
3-Monats-Trend: -93.55%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)45 V
Current1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation250 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen