Nexperia BC847A
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -0.50%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1988-01-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
Beschreibungen
Beschreibungen von Nexperia BC847A, die von den Distributoren bereitgestellt werden.
45V 300mW 110@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
45 V, 100 MA NPN GENERAL-PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC847A; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:110; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:1E; Termination Type:SMD; Voltage Vcbo:50V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
Aliasnamen des Herstellers
Nexperia verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Nexperia ist möglicherweise auch unter den folgenden Namen bekannt:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Bestandsverlauf
3-Monats-Trend: -0.50%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min110
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Dimensions
Height1 mm
Length3 mm
Width1.4 mm