Infineon IRS2011SPBF

IRS2011 Series 1 A 20 V Supply Dual High And Low Side Driver - SOIC-8
$ 1.52
Obsolete
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Datenblätter und Dokumente

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SHENGYU ELECTRONICS

Datasheet22 SeitenVor 10 Jahren

IHS

Factory Futures

Newark

iiiC

Bestandsverlauf

3-Monats-Trend:
-14.29%

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Alternative Teile

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Price @ 1000
$ 1.52
$ 0.568
Stock
347,479
656,087
Authorized Distributors
4
6
Case/Package
SOP
SOP
Number of Pins
8
8
Channel Type
Independent
Independent
Number of Drivers
2
2
Max Output Current
1 A
1 A
Rise Time
-
25 ns
Fall Time
35 ns
15 ns
Min Supply Voltage
10 V
10 V
Max Supply Voltage
20 V
20 V
Max Power Dissipation
625 mW
625 mW

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date2005-07-21
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2023-09-15
LTD Date2024-03-15

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DRIVER, MOSFET, DUAL, 3A, 8SOIC; Device Type:Low Side; Module Configuration:Inve

Beschreibungen

Beschreibungen von Infineon IRS2011SPBF, die von den Distributoren bereitgestellt werden.

IRS2011 Series 1 A 20 V Supply Dual High And Low Side Driver - SOIC-8
Gate Drivers The factory is currently not accepting orders for this product
MOSFET DRVR 200V 1A 2-OUT Hi/Lo Side Non-Inv 8-Pin SOIC Tube
25ns 2 10V 80ns 20V 800mV,2.7V Inverting MOSFET,N 15ns 1A,1A SOIC-8 1.75mm
Bridge Driver IC Operating temperature: -40...+125 °C Output voltage: 10...20 V Power supply: 10...20 V Input: logic input Package: SO-8 Sink output current: 1 A Source output current: 1 A
MOSFET Driver IC; Supply Voltage Max:20V; Termination Type:SMD; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Fall Time, tf:15ns; High Side MOSFET Drive Type:Bootstrapped ;RoHS Compliant: Yes
200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +200 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Independent low-side and high-side channels; Input logic HIN/LIN active high; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; CMOS Schmitt-triggered inputs with pull-down; Matched propagation delay for both channels
DRIVER, DUAL LOW SIDE INVERT, 2011; Device Type:MOSFET; Module Configuration:High Side; Peak Output Current:1A; Input Delay:60ns; Output Delay:60ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2011; IC Generic Number:2011; Logic Function Number:2011; Logic IC Function:Hi & Lo MOS Driver; No. of Outputs:2; Offset Voltage:200V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:1A; Output Current + Max:1A; Output Sink Current Min:1A; Output Source Current Min:1A; Output Voltage:220V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:60ns; Turn On Time:60ns; Voltage Vcc Max:20V; Voltage Vcc Min:10V

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  • Infineon Technologies
  • INF
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  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFIRS2011SPBF
  • SP001534520