Infineon IRS2607DSTRPBF

High Voltage, High Speed Power Mosfet And Igbt Driver With Independent High Side, SOIC 8N, RoHS
$ 1.14
Obsolete
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DistributorSKUMinPkg
Rochester ElectronicsIRS2607DSTRPBF2.799
18h
RS (Formerly Allied Electronics)IRS2607DSTRPBF02500Bulk
10h
Win SourceWS-IRS2607DSTRPBF5.60035
19h
Worldway ElectronicsIRS2607DSTRPBF15.1407Bulk
18h
ICPartonlineIRS2607DSTRPBF9.184
2d

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SHENGYU ELECTRONICS

Datasheet28 SeitenVor 14 Jahren

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date2008-05-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-01-08
LTD Date2017-07-06

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Beschreibungen

Beschreibungen von Infineon IRS2607DSTRPBF, die von den Distributoren bereitgestellt werden.

High Voltage, High Speed Power Mosfet And Igbt Driver With Independent High Side, SOIC 8N, RoHS
Infineon SCT
HIGH AND LOW SIDE DRIVER Full Bridge Based MOSFET Driver, 0.2A, CMOS, PDSO8
ComSIT Distribution GmbH
600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V and 15 V logic compatible; Matched propagation delay for both channels; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs; Integrated Bootstrap Diode; Suitable for both trapezoidal and sinusoidal motor control
Infineon

Bilder

Infineon
Augswan
International Rectifier
Rochester Electronics

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Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFIRS2607DSTRPBF
  • IRS2607DSTRPBF.
  • SP001543154