Infineon IRLZ44ZSPBF
$ 1.56
Obsolete
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Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRLZ44ZSPBF herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 6 months ago)
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Beschreibungen
Beschreibungen von Infineon IRLZ44ZSPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 51A;D2Pak;PD 80W;VGS +/-16V
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 80 W
Trans MOSFET N-CH 55V 51A 3-Pin(2+Tab) D2PAK
HEXFET Power MOSFET Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 55V, 51A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:51A; Junction to Case Thermal Resistance A:1.87°C/W; On State resistance @ Vgs = 10V:13.5mohm; Package / Case:D2-PAK; Power Dissipation Pd:80W; Power Dissipation Pd:80W; Pulse Current Idm:204A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)51 A
Current Rating51 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.62 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation80 W
Rds On Max13.5 mΩ
Recovery Time32 ns
Resistance13.5 mΩ
Rise Time160 ns
Threshold Voltage3 V
Turn-Off Delay Time25 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Datenblätter und Dokumente
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Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen