Infineon IRLZ44NSPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 47A;D2Pak;PD 110W;VGS +/-16V;-55

Single N-Channel 55 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - D2PAK

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 110 W

Trans MOSFET N-CH 55V 47A 3-Pin(2+Tab) D2PAK

FIFTH GENERATION HEXFET POWER MOSFET Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

MOSFET, N, 55V, 47A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:110W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:47A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:160A; SMD Marking:LZ44NS; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V