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InfineonIRFZ44NSTRLPBF

InfineonAUIRFZ44NS

Price @ 1000

$ 0.478

$ 1.12

Stock

1,152,109

134,601

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

49 A

Threshold Voltage

2 V

Rds On Max

17.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.8 W

Input Capacitance

1.47 nF

Lieferkette

Country of OriginMainland China, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusProduction (Last Updated: 3 months ago)

Beschreibungen

Beschreibungen von Infineon IRFZ44NSTRLPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20

RS (Formerly Allied Electronics)

Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 49A 3-Pin (2+Tab) D2PAK T/R

Verical

IRFZ44NSTRLPBF,MOSFET, 55V, 49 A, 17.5 MOHM, 42 NC QG, D2-PA

Jameco (USA)

HEXFET POWER MOSFET Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:49A; On Resistance Rds(On):0.0175Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94

Distrelec

Bilder

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

IRFZ44NSTRLPBF.
SP001578598

Bestandsverlauf

3-Monats-Trend: -4.52%

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Technische Spezifikationen

Physical

Case/PackageD2PAK

MountSurface Mount

Number of Pins3

Number of Terminals2

Technical

Continuous Drain Current (ID)49 A

Current Rating49 A

Drain to Source Breakdown Voltage55 V

Drain to Source Resistance17.5 mΩ

Drain to Source Voltage (Vdss)55 V

Element ConfigurationSingle

Fall Time45 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.47 nF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation94 W

Min Breakdown Voltage55 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Elements1

On-State Resistance17.5 mΩ

Package Quantity800

PackagingTape and Reel

Power Dissipation3.8 W

Rds On Max17.5 mΩ

Resistance17.5 MΩ

Rise Time60 ns

Schedule B8541290080

Turn-Off Delay Time44 ns

Turn-On Delay Time12 ns

Voltage Rating (DC)55 V

Dimensions

Height4.826 mm

Length10.668 mm