Infineon IRLU8256PBF
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
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Tube Through Hole N-Channel Single Mosfet Transistor 11.4A Ta 78A Tc 78A 64W 42ns
Beschreibungen
Beschreibungen von Infineon IRLU8256PBF, die von den Distributoren bereitgestellt werden.
MOSFET, 25V, 81A, 5.7 MOHM, 10 NC QG, LOGIC LEVEL, I-PAK
HEXFET POWER MOSFET Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N-CH 25V 81A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Package / Case:IPAK; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)81 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.7 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Fall Time8.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.47 nF
Max Operating Temperature175 °C
Max Power Dissipation63 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation63 W
Rds On Max5.7 mΩ
Recovery Time29 ns
Rise Time46 ns
TerminationThrough Hole
Threshold Voltage1.8 V
Turn-Off Delay Time12 ns
Turn-On Delay Time9.7 ns
Dimensions
Height6.22 mm
Length6.7056 mm
Width2.3876 mm