Infineon IRLR3410TRLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.105 Ohm; Id 17A; D-pak (TO-252AA); Pd 79W
$ 0.444
Production
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DistributorSKUMinPkg
Newark
2
IRLR3410TRLPBF1.4645Cut Tape
Arrow Electronics
3
IRLR3410TRLPBF2.5801
Future Electronics
2
IRLR3410TRLPBF18.0003KTape & Reel
Rochester ElectronicsIRLR3410TRLPBF14.820
3h
DigiKey
3
IRLR3410TRLPBFCT-ND8.1361Cut Tape

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRLR3410TRLPBF herunter.

IHS

Datasheet11 SeitenVor 21 Jahren

Newark

DigiKey

RS (Formerly Allied Electronics)

iiiC

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-30
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Beschreibungen

Beschreibungen von Infineon IRLR3410TRLPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.105Ohm;ID 17A;D-Pak (TO-252AA);PD 79W
RS (Formerly Allied Electronics)
Single N-Channel 100 V 105 mOhm 34 nC HEXFET® Power Mosfet - DPAK
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
MOSFET, N-CH, 100V, 17A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po
element14 APAC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; On Resistance, Rds(on):155mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:79W ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 105 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79
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Bilder

Infineon
element14
element14
RS
element14 APAC
iiiC
Future Electronics
LZChips

Aliasnamen des Herstellers

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFIRLR3410TRLPBF
  • IRLR3410TRLPBF.
  • SP001576994