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Infineon IRLR2705TRLPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.04 Ohm; Id 28A; D-pak (TO-252AA); Pd 68W; -55DE
$ 0.661
Obsolete
Datenblatt
Herstellerseite

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Future Electronics
IRLR2705TRLPBF
3.000
3K
Tape & Reel
USD
0,285
Arrow Electronics
IRLR2705TRLPBF
885
1
USD
0,661
0,661
0,661
0,661
0,661
RS (Formerly Allied Electronics)
IRLR2705TRLPBF
0
3K
Bulk
USD
1,117
22h
Weyland Electronics Group Pte. Ltd.
IRLR2705TRLPBF
8.300
1
Tape & Reel
USD
0,910
0,910
0,910
0,910
0,910
9h
Win Source
WS-IRLR2705TRLPBF
19.240
105
USD
0,321
0,321
10h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRLR2705TRLPBF herunter.

element14 APAC

Datasheet11 SeitenVor 21 Jahren

IHS

DigiKey

RS (Formerly Allied Electronics)

Bestandsverlauf

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2024-09-30
LTD Date2025-03-31

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Beschreibungen

Beschreibungen von Infineon IRLR2705TRLPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
RS (Formerly Allied Electronics)
Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - D2PAK
Future Electronics
MOSFET N-CH 55V 28A DPAK N-Channel 55 V 28A (Tc) 68W (Tc) Surface Mount TO-252AA (DPAK)
Eurochip Technologies LTD
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
68W(Tc) 16V 2V@ 250µA 25nC@ 5 V 1individualNChannel 55V 40mΩ@ 17A,10V 28A 880pF@25V DPAK，TO-252AA SMD mount 6.5mm*6.22mm*2.3mm
UnikeyIC
Mosfet, N-Ch, 55V, To-252Aa-3; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.04Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes |Infineon Technologies IRLR2705TRLPBF
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 28 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
Distrelec

Bilder

Infineon
Farnell
element14
element14
Distrelec
Future Electronics
LZChips

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFIRLR2705TRLPBF
  • SP001552768