Infineon IRLMS6802TRPBF
$ 0.187
Obsolete
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Price @ 1000
$ 0.187
$ 0.187
Stock
5,623,547
5,623,547
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
LSOP
LSOP
Drain to Source Voltage (Vdss)
-20 V
-20 V
Continuous Drain Current (ID)
5.6 A
5.6 A
Threshold Voltage
-
-
Rds On Max
50 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
2 W
2 W
Input Capacitance
1.079 nF
1.079 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-04-09
Lifecycle StatusObsolete (Last Updated: 3 months ago)
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Beschreibungen
Beschreibungen von Infineon IRLMS6802TRPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.05Ohm;ID -5.6A;Micro6 (SOT-23);PD 2W
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Infineon SCT
Single P-Channel 20 V 0.100 Ohm 16 nC 2 W Silicon SMT Mosfet - MICRO-6
MOSFET, P, LOGIC, MICRO-6; Transistor Polarity:P Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.2V; Power Dissipation Pd:2W; Transistor Case Style:µSOIC; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; On State Resistance @ Vgs = 2.5V:100mohm; On State Resistance @ Vgs = 4.5V:50mohm; P Channel Gate Charge:11nC; Package / Case:Micro6; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:45A; SMD Marking:2E; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-1.2V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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3-Monats-Trend: -16.34%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageLSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)5.6 A
Current Rating-5.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Fall Time72 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.079 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.2 V
Number of Channels1
Number of Elements1
On-State Resistance50 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max50 mΩ
Resistance100 mΩ
Rise Time33 ns
Schedule B8541290080
Turn-Off Delay Time70 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.45 mm
Length2.9972 mm
Width1.75 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen