Infineon IRLL024NPBF

Transistor: N-MOSFET; unipolar; 55V; 4.4A; 0.065ohm; 2.1W; -55+150 deg.C; SMD; SOT223

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 4.4A;SOT-223;PD 2.1W;VGS +/-16V

Single N-Channel 55 V 0.08 Ohm 10.4 nC HEXFET® Power Mosfet - SOT-223

MOSFET N-CH 55V 3.1A SOT223 N-Channel 55 V 3.1A (Ta) 1W (Ta) Surface Mount SOT-223

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W

Trans MOSFET N-CH 55V 4.4A 4-Pin(3+Tab) SOT-223 Tube

HEXFET POWER MOSFET Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

MOSFET, N, 55V, 4.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:120°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:12A; SMD Marking:LL024N; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V