Infineon IRL3705ZLPBF
$ 1.24
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 1.24
$ 1.24
Stock
246,610
60,897
Authorized Distributors
3
3
Mount
Through Hole
Through Hole
Case/Package
TO-262
TO-262
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
-
-
Rds On Max
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
130 W
130 W
Input Capacitance
2.88 nF
2.88 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-03
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2023-03-31
LTD Date2023-09-30
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Beschreibungen
Beschreibungen von Infineon IRL3705ZLPBF, die von den Distributoren bereitgestellt werden.
MOSFET N-CH 55V 75A TO262 / N-Channel 55 V 75A (Tc) 130W (Tc) Through Hole TO-262
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
130W(Tc) 16V 3V@ 250µA 60nC@ 5 V 1individualNChannel 55V 8mΩ@ 52A,10V 75A 2.88nF@25V TO-262 Through hole mounting 10.2mm*4.5mm*9.45mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time83 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.88 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance8 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation130 W
Rds On Max8 mΩ
Rise Time240 ns
Turn-Off Delay Time26 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)55 V
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen