Infineon IRL2203NPBF

MOSFET N-CH 30V 116A TO220AB N-Channel 30 V 116A (Tc) 180W (Tc) Through Hole TO-220AB

Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB

Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

Trans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W

HEXFET POWER MOSFET Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

180W(Tc) 16V 1V@ 250µA 60nC@ 4.5 V 1individualNChannel 30V 7mΩ@ 60A,10V 116A 3.29nF@25V TO-220AB Through hole mounting 9.02mm(height)

MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V