Infineon IRFSL7440PBF
$ 0.848
Obsolete
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
Verwandte Teile
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MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 280A;TO-262;PD 330W;VF 1.3V
InfineonAUIRF1404ZL
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
Beschreibungen
Beschreibungen von Infineon IRFSL7440PBF, die von den Distributoren bereitgestellt werden.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
Infineon SCT
MOSFET N CH 40V 120A TO-262 / N-Channel 40 V 120A (Tc) 208W (Tc) Through Hole TO-262
Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - TO-262
Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N-CH, 40V, 120A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High175 °C
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.73 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation208 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity1000
Power Dissipation208 W
Rds On Max2.5 mΩ
Resistance2.5 MΩ
Rise Time68 ns
Threshold Voltage3 V
Turn-Off Delay Time115 ns
Turn-On Delay Time24 ns
Dimensions
Height15.1 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen