Infineon IRFSL7437PBF
$ 1.419
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Min.
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Bestandsverlauf
3-Monats-Trend: +15.56%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-09-07
Lifecycle StatusProduction (Last Updated: 3 months ago)
Verwandte Teile
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40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
InfineonIRF1404LPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;TO-262;PD 200W;VGS +/-20V
InfineonIRFSL7537PBF
MOSFET N-CH 60V 173A TO262 N-Channel 60 V 173A (Tc) 230W (Tc) Through Hole TO-262
Beschreibungen
Beschreibungen von Infineon IRFSL7437PBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - TO-262
MOSFET N-CH 40V 195A TO262 N-Channel 40 V 195A (Tc) 230W (Tc) Through Hole TO-262
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N-CH, 40V, 195A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 250 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 1.4 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 78 / Turn-ON Delay Time ns = 19 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +15.56%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time53 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.33 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance1.8 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max1.8 mΩ
Resistance1.8 MΩ
Rise Time70 ns
Threshold Voltage3 V
Turn-Off Delay Time78 ns
Turn-On Delay Time19 ns
Dimensions
Height15.01 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen