Infineon IRFSL4620PBF
$ 2.95
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
Verwandte Teile
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MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V
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Beschreibungen
Beschreibungen von Infineon IRFSL4620PBF, die von den Distributoren bereitgestellt werden.
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET POWER MOSFET Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N CH, 200V, 24A, TO262; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:200V; On Resistance Rds(on):63.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:TO-262; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance77.5 mΩ
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time14.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.71 nF
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation144 W
Rds On Max77.5 mΩ
Resistance63.7 MΩ
Rise Time22.4 ns
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time25.4 ns
Turn-On Delay Time13.4 ns
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen