Infineon IRFS7787PBF
$ 0.735
Obsolete
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Price @ 1000
$ 0.735
$ 2.7
Stock
94,661
150,468
Authorized Distributors
2
2
Mount
Surface Mount, Through Hole
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
76 A
76 A
Threshold Voltage
-
-
Rds On Max
8.4 mΩ
8.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
125 W
125 W
Input Capacitance
4.02 nF
4.02 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-09-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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Beschreibungen
Beschreibungen von Infineon IRFS7787PBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 75 V 8.4 mOhm 73 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 75V 76A 3-Pin(2+Tab) D2PAK Tube
Brushed Motor drive applications | MOSFET N-CH 75V 76A D2PAK
MOSFET, 75V, 76A, 8.4 Ohm, 73 nC, D2PAK
Power Field-Effect Transistor, 76A I(D), 75V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.02 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8.4 mΩ
Package Quantity1000
Power Dissipation125 W
Rds On Max8.4 mΩ
Rise Time48 ns
Schedule B8541290080
Turn-Off Delay Time51 ns
Turn-On Delay Time11 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen