Infineon IRFS3004-7PPBF
$ 5.06
Obsolete
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Nicht autorisierte Händler
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Price @ 1000
$ 5.06
$ 1.68
Stock
147,940
1,004,492
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
4 V
-
Rds On Max
1.25 mΩ
1.25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
380 W
380 W
Input Capacitance
9.13 nF
9.13 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
InfineonAUIRFS3004-7TRL
MOSFET N-CH 40V 240A D2PAK / N-Channel 40 V 240A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead)
InfineonAUIRFS3004-7P
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS
VishaySQM200N04-1M1L-GE3
SQM200N04-1M1L-GE3 N-CHANNEL MOSFET TRANSISTOR, 200 A, 40 V, 7-PIN TO-263
STMicroelectronicsSTH270N4F3-6
STH270N4F3-6 N-channel MOSFET Transistor, 180 A, 40 V, 8-Pin H2PAK
STMicroelectronicsSTH410N4F7-6AG
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
Beschreibungen
Beschreibungen von Infineon IRFS3004-7PPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 40 V 1.25 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 380 W
Trans MOSFET N-CH 40V 400A 7-Pin(6+Tab) D2PAK Tube
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
MOSFET, N CH, 40V, 240A, D2PAK-7; Transistor Polarity:N Channel; Continuous Drain Current Id:400A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (19-Dec-2011); Current Id Max:400A; Package / Case:D2-PAK; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time160 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.13 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.25 mΩ
Package Quantity3000
Power Dissipation380 W
Rds On Max1.25 mΩ
Resistance1.25 MΩ
Rise Time240 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time91 ns
Turn-On Delay Time23 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen