Infineon IRFR5410PBF
$ 1.15
Obsolete
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InfineonIRFR5410TRPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
InfineonIRFR5410TRLPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
InfineonAUIRFR5410
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
onsemiHUF76609D3S
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 10A DPAK
Beschreibungen
Beschreibungen von Infineon IRFR5410PBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;D-Pak (TO-252AA);PD 66W
Transistor MOSFET P Channel 100 Volt 13 Amp 3 Pin 2+ Tab Dpak
Single P-Channel 100 V 0.205 Ohm 58 nC HEXFET® Power Mosfet - TO-252AA
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -100V, 13A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):205mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:66W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-13A; Junction to Case Thermal Resistance A:1.9°C/W; On State resistance @ Vgs = 10V:205mohm; Package / Case:DPAK; Power Dissipation Pd:66W; Power Dissipation Pd:66W; Pulse Current Idm:5.2A; Termination Type:SMD; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Current Rating-13 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance205 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage-100 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance205 mΩ
Package Quantity3000
Power Dissipation66 W
Rds On Max205 mΩ
Recovery Time190 ns
Resistance205 mΩ
Rise Time58 ns
Threshold Voltage-4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-100 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen