Infineon IRFR24N15DPBF
$ 1.86
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
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MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.125Ohm;ID 18A;D-Pak (TO-252AA);PD 110W
InfineonIRFR4615TRLPBF
N CH POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Conti
Beschreibungen
Beschreibungen von Infineon IRFR24N15DPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 150 V 95 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, 150V, 24A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:24A; Junction to Case Thermal Resistance A:1.1°C/W; On State resistance @ Vgs = 10V:95ohm; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:96A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)24 A
Current Rating24 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance890 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
On-State Resistance95 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max95 mΩ
Resistance95 Ω
Rise Time53 ns
Threshold Voltage5 V
Turn-Off Delay Time19 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)150 V
Dimensions
Height2.2606 mm
Length6.7056 mm
Width2.39 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen