Infineon IRFR1205PBF
$ 1.04
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
InfineonIRFR1205TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 44A;D-Pak (TO-252AA);PD 107W
InfineonIRFR2405PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
onsemiFDD10AN06A0
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
Beschreibungen
Beschreibungen von Infineon IRFR1205PBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 55 V 0.027 Ohm 65 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 37A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:55V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:69W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:44A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:69W; Power Dissipation Pd:69W; Pulse Current Idm:150A; SMD Marking:IRFR1205; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating37 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation69 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
Power Dissipation69 W
Rds On Max27 mΩ
Recovery Time98 ns
Resistance27 mΩ
Rise Time69 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time47 ns
Turn-On Delay Time7.3 ns
Voltage Rating (DC)55 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.8 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen