Infineon IRFF9120
$ 18.27
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -30.82%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
International RectifierJANTX2N6790
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Beschreibungen
Beschreibungen von Infineon IRFF9120, die von den Distributoren bereitgestellt werden.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single P-Channel 100 V 20 W 16.3nC Hexfet Power Mosfet Through Hole - TO-39
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3
Infineon SCT
Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):0.6ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-205AF ;RoHS Compliant: No
MOSFET, P, TO-39; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-100V; Current, Id Cont:4A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-39; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:115mJ; Current Temperature:25°C; Current, Idm Pulse:16A; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Lead Length:14.22mm; Max Junction Temperature, Tj:150°C; Min Junction Temperature, Tj:-55°C; No. of Pins:3; No. of Transistors:1; Power Dissipation:20W; Power Dissipation Pd:20W; Voltage, Vds Max:100V; Voltage, Vgs th Max:-4V; Weight:0.002kg
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -30.82%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vdss)-100 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance600 mΩ
Power Dissipation20 W
Schedule B8541290080
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Compliance-Erklärungen