Infineon IRFB3004PBF

Single N-Channel 40 V 1.75 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
$ 1.855
Obsolete
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DistributorSKUMinPkg
AvnetIRFB3004PBF7001
1d
Arrow Electronics
2
IRFB3004PBF1.8891
Rochester ElectronicsIRFB3004PBF678
5h
RS (Formerly Allied Electronics)IRFB3004PBF02Bulk
21h
FarnellIRFB3004PBF5061
4h

Datenblätter und Dokumente

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Newark

Datasheet11 SeitenVor 17 Jahren

IHS

Farnell

iiiC

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3-Monats-Trend:
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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30

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Beschreibungen

Beschreibungen von Infineon IRFB3004PBF, die von den Distributoren bereitgestellt werden.

Single N-Channel 40 V 1.75 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
Future Electronics
Power MOSFET, HEXFET, N Channel, 40 V, 195 A, 0.00175 ohm, TO-220AB, Through Hole
Avnet
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 340A 3-Pin(3+Tab) TO-220 Full-Pak Tube
Verical
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 380 W
Distrelec
HEXFET Power MOSFET Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
MOSFET N CH, 40V 340A TO220AB; Transistor Polarity:N Channel; On State Resistance:1.75mohm; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Base Number:3004; Case Style:TO-220AB; Cont Current Id:195A; Max Voltage Vgs th:4V; Min Voltage Vgs th:2V; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:40V; Typ Voltage Vgs th:4V; Voltage Vgs Rds on Measurement:10V; Driver IC Case Style:TO-220AB
Farnell
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.
Infineon

Bilder

Infineon
RS
TME
Newark
UTSource
LZChips
Distrelec
International Rectifier
Rochester Electronics

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  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFB3004PBF.
  • SP001572420