Infineon IRF1404PBF
$ 0.98
NRND
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CAD-Modelle
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Price @ 1000
$ 0.98
$ 4.9
Stock
2,415,925
228,670
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
75 A
160 A
Threshold Voltage
4 V
2 V
Rds On Max
4 mΩ
4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
333 W
Input Capacitance
5.669 nF
5.669 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-06-21
Lifecycle StatusNRND (Last Updated: 3 months ago)
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Beschreibungen
Beschreibungen von Infineon IRF1404PBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 40 V 0.004 Ohm 196 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET, N Channel, 40 V, 162 A, 0.004 ohm, TO-220AB, Through Hole
RoHS|YES|MEDIX|44225|TRANS MOSFET N-CH 40V 202A 3-P|IN(3+TAB) TO-220AB|
MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 333 W
Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 40V, 162A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:202A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:4mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:650A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +1.10%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating162 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.669 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max4 mΩ
Recovery Time117 ns
Resistance4 mΩ
Rise Time190 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time46 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)40 V
Dimensions
Height19.8 mm
Lead Pitch2.54 mm
Length10.668 mm
Width4.826 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen