Infineon IRF9540NPBF
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Price @ 1000
$ 0.55
$ 1.657
Stock
1,549,303
58,396
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
-100 V
-100 V
Continuous Drain Current (ID)
23 A
23 A
Threshold Voltage
-4 V
-2 V
Rds On Max
117 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
94 W
140 W
Input Capacitance
1.3 nF
1.3 nF
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-06-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-01-09
LTD Date2014-07-09
Verwandte Teile
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
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InfineonIRL530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V
Beschreibungen
Beschreibungen von Infineon IRF9540NPBF, die von den Distributoren bereitgestellt werden.
Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-220-3
MOSFET, Power; P-Channel; 0.117 Ohms @ -10 V, -11 A; 20 V (Max.); 62 degC/W
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET, P-CHANNEL, -100V, -23A, 117 MOHM, 64.7 NC QG, TO-220
Power MOSFET, P Channel, 100 V, 23 A, 117 mOhm, TO-220AB, 3 Pins, Through Hole
Transistor MOSFET P-Ch. -23A/-100V TO220 IRF 9540 N PBF
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 140 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P Channel Mosfet, -100V, -23A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF9540NPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, P, -100V, -23A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:94W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-23A; Current Temperature:25°C; Device Marking:IRF9540N; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State Resistance Max:117mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:94W; Power Dissipation Pd:94W; Pulse Current Idm:76A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +1.89%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Current Rating-23 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance117 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage-100 V
Element ConfigurationSingle
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance117 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation94 W
Rds On Max117 mΩ
Recovery Time220 ns
Resistance117 mΩ
Rise Time67 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time51 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-100 V
Dimensions
Height15.24 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Compliance
Umweltklassifizierung
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen