Infineon IRF7809AVPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRF7809AVPBF herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
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30V 17A 9.5m´Î@10V10A 5W 2.2V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
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Beschreibungen
Beschreibungen von Infineon IRF7809AVPBF, die von den Distributoren bereitgestellt werden.
IRF7809AVPBF: 30 V 13.3 A 9 mOhm SMT Hexfet Power Mosfet - SOIC-8
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.3A;SO-8;PD 2.5W;VGS +/-12V
Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC
HEXFET POWER MOSFET Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13.3A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:F7809; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)13.3 A
Current Rating17 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.78 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max9 mΩ
Rise Time36 ns
Threshold Voltage1 V
Turn-Off Delay Time96 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length5 mm
Row Spacing6.3 mm
Datenblätter und Dokumente
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Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen