Infineon IRF7759L2TR1PBF
$ 5.3
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7759L2TR1PBF | 0 | 1K | Bulk | 9h | |||||||
| Farnell | IRF7759L2TR1PBF | 0 | 1 | Cut Tape | 7h | |||||||
| Component Stockers USA | IRF7759L2TR1PBF | 451 | >1wk | |||||||||
| Win Source | WS-IRF7759L2TR1PBF | 20.650 | 8 | 20h | ||||||||
| Worldway Electronics | IRF7759L2TR1PBF | 9.909 | 7 | Tape & Reel | 1d |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-16
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
Verwandte Teile
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Beschreibungen
Beschreibungen von Infineon IRF7759L2TR1PBF, die von den Distributoren bereitgestellt werden.
MOSFET Operating temperature: -55...175 °C Housing type: DirectFET Polarity: N Power dissipation: 3.3 W
MOSFET N-CH 75V 26A DIRECTFET / N-Channel 75 V 26A (Ta), 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
A 75V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N CH, 75V, 160A, DIRECTFET L8; Transistor Polarity:N Channel; Drain Source Voltage Vds:75V; On Resistance Rds(on):1.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Current Id Max:160A; Power Dissipation Pd:125W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins5
Number of Terminals9
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.3 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.222 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.3 W
Rds On Max2.3 mΩ
Recovery Time96 ns
Resistance2.3 MΩ
Rise Time37 ns
Threshold Voltage3 V
Turn-Off Delay Time80 ns
Turn-On Delay Time18 ns
Dimensions
Height780 µm
Length9.144 mm
Width7.1 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen