Infineon IRF7450PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7450PBF | 0 | 3800 | Bulk | 9h | |||||||
| Farnell | IRF7450PBF | 0 | 5 | 17h | ||||||||
| Win Source | WS-IRF7450PBF | 25.580 | 70 | 18h | ||||||||
| Worldway Electronics | IRF7450PBF | 18.131 | 7 | Tube | 17h | |||||||
| Aztech | IRF7450PBF | 271 | 13h |
CAD-Modelle
Laden Sie Infineon IRF7450PBF Symbol-, Footprint- und 3D-STEP-Modelle von unseren zuverlässigen Partnern herunter.
| QUELLE | eCAD | mCAD | DATEIEN |
|---|---|---|---|
 SnapEDA | Fußabdruck | 3D | Herunterladen |
Beim Herunterladen der CAD-Modelle wird die Partner-Website in einem neuen Tab geöffnet.
Durch das Herunterladen von CAD-Modellen von Octopart stimmen Sie unseren Allgemeinen Geschäftsbedingungen und unserer Datenschutzrichtlinie zu.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Beschreibungen
Beschreibungen von Infineon IRF7450PBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 200 V 170 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8
SMPS MOSFET HEXFET Power MOSFET | MOSFET N-CH 200V 2.5A 8-SOIC
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 2.5A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Fall Time tf:17ns; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power Dissipation Pd:2.5W; Power Dissipation Pd:3W; Pulse Current Idm:20A; Rise Time:3ns; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance940 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance170 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max170 mΩ
Resistance170 MΩ
Rise Time3 ns
TerminationSMD/SMT
Threshold Voltage5.5 V
Turn-Off Delay Time17 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)200 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen