Infineon IRF7465PBF
Obsolete
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SKU
Min.
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-02-08
Lifecycle StatusObsolete (Last Updated: 7 months ago)
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Beschreibungen
Beschreibungen von Infineon IRF7465PBF, die von den Distributoren bereitgestellt werden.
IRF7465PBF N-channel MOSFET Transistor,1.9 A, 150 V, 8-Pin SOIC
High frequency DC-DC converters, Lead-Free | MOSFET N-CH 150V 1.9A 8-SOIC
MOSFET N-CH 150V 1.9A 8SO N-Channel 150 V 1.9A (Ta) 2.5W (Ta) Surface Mount 8-SO
Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Fall Time tf:9ns; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:15A; Rise Time:1.2ns; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)1.9 A
Current Rating1.9 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Fall Time9 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance330 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Elements1
On-State Resistance280 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max280 mΩ
Resistance280 mΩ
Rise Time1.2 ns
TerminationSMD/SMT
Threshold Voltage5.5 V
Turn-Off Delay Time10 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)150 V
Dimensions
Height1.5 mm
Length5 mm
Width3.9878 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen