Infineon IRF7420PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
InfineonIRF7329PBF
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de
InfineonIRF7410TRPBF
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V
Beschreibungen
Beschreibungen von Infineon IRF7420PBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 14Milliohms;ID -11.5A;SO-8;PD 2.5W;VGS +/-
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 11.5A I(D), 12V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-11.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:46A; SMD Marking:F7420; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)11.5 A
Current Rating-11.5 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)-12 V
Dual Supply Voltage-12 V
Element ConfigurationSingle
Fall Time225 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance3.529 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-900 mV
Number of Channels1
Number of Elements1
On-State Resistance14 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time8.8 ns
Threshold Voltage-900 mV
Turn-Off Delay Time291 ns
Turn-On Delay Time8.8 ns
Voltage Rating (DC)-12 V
Dimensions
Height1.75 mm
Length4.9784 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen