Infineon IRF7329PBF
Obsolete
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Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Dieser Teil
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Price @ 1000
$ 0.495
Stock
217,731
502,415
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
-12 V
-12 V
Continuous Drain Current (ID)
9.2 mA
9.2 A
Threshold Voltage
-900 mV
-
Rds On Max
17 mΩ
17 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
2 W
2 W
Input Capacitance
3.45 nF
3.45 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-02-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Verwandte Teile
Beschreibungen
Beschreibungen von Infineon IRF7329PBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de
Transistor MOSFET Positive Channel 12 Volt 9.2A 8-Pin SOIC T/R
Dual P-Channel 12 V 17 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Low RDS(on); Dual P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-9.2A; On Resistance, Rds(on):17mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:12V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-9.2A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:37A; Row Pitch:6.3mm; SMD Marking:IRF7329PBF; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9.2 mA
Current Rating-9.2 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)-12 V
Dual Supply Voltage-12 V
Element ConfigurationDual
Fall Time260 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance3.45 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-900 mV
Number of Channels2
Number of Elements2
On-State Resistance17 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max17 mΩ
Resistance17 MΩ
Rise Time8.6 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-900 mV
Turn-Off Delay Time340 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-12 V
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen