Infineon IRF7314PBF
$ 0.74
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
InfineonIRF7314TRPBF
MOSFET, Power;Dual P-Ch;VDSS -20V;RDS(ON) 0.058Ohm;ID -5.3A;SO-8;PD 2W;VGS +/-12
Beschreibungen
Beschreibungen von Infineon IRF7314PBF, die von den Distributoren bereitgestellt werden.
Dual P-Channel 20 V 0.058 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual P-CH 20V 5.3A 8-Pin SOIC Tube
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:23A; Row Pitch:6.3mm; SMD Marking:F7314; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.3 A
Current Rating-5.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance58 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time49 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance780 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-700 mV
Number of Elements2
On-State Resistance58 mΩ
Package Quantity3800
PackagingBulk
Rds On Max58 mΩ
Recovery Time71 ns
Resistance58 mΩ
Rise Time40 ns
Threshold Voltage-700 mV
Turn-Off Delay Time41 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen