Infineon IRF7104PBF
$ 0.52
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
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MOSFET, Power;Dual P-Ch;VDSS -20V;RDS(ON) 0.25Ohm;ID -2.3A;SO-8;PD 2W;VGS +/-12V
InfineonIRF7324D1TRPBF
-20V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | Infineon IRF7324D1TRPBF
Beschreibungen
Beschreibungen von Infineon IRF7104PBF, die von den Distributoren bereitgestellt werden.
Dual P-Channel 20 V 0.25 Ohm 9.3 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual P-CH 20V 2.3A 8-Pin SOIC Tube
Avnet Japan
Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
DUAL P CHANNEL MOSFET, -20V, SOIC; Trans; Transistor Polarity:P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:IRF7104PBF; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -100%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.3 A
Current Rating-2.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationDual
Fall Time30 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance290 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements2
On-State Resistance250 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max250 mΩ
Recovery Time100 ns
Resistance250 mΩ
Rise Time16 ns
TerminationSMD/SMT
Threshold Voltage-3 V
Turn-Off Delay Time42 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen